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Transistor
2SC1318A
Silicon NPN epitaxial planer type
For low-frequency driver amplification Complementary to 2SA720A
5.00.2
Unit: mm
4.00.2
q q
0.70.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25C)
Ratings 80 70 5 1 0.5 750 150 -55 ~ +150 Unit V V V A A mW C C
0.45+0.15 0.1 2.5+0.6 0.2 1 23 2.5+0.6 0.2 0.45+0.15 0.1
2.30.2
12.90.5
1:Emitter 2:Collector 3:Base EIAJ:SC-43A TO-92-A1 Package
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25C)
Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = 20V, IE = 0 IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 150mA*2 VCE = 10V, IC = 500mA*2 IC = 300mA, IB = 30mA*2 IC = 300mA, IB = 30mA*2 VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 80 70 5 85 40 160 100 0.2 0.85 120 11
*2
min
typ
0.70.2
High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier.
5.10.2
s Features
max 0.1
Unit A V V V
340
0.6 1.5
V V MHz
20
pF
Pulse measurement
*1h
FE1
Rank classification
Q 85 ~ 170 R 120 ~ 240 S 170 ~ 340
Rank hFE1
311
Transistor
PC -- Ta
1.2 1.2 Ta=25C IB=-10mA 8mA 7mA 6mA 5mA 0.6 4mA 3mA 0.4 2mA 0.2 1mA
2SC1318A
IC -- VCE
1.2 VCE=10V Ta=25C 1.0
IC -- I B
Collector power dissipation PC (W)
1.0
1.0
Collector current IC (A)
0.8
0.8
Collector current IC (A)
9mA
0.8
0.6
0.6
0.4
0.4
0.2
0.2
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10
0 0 2 4 6 8 10
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base current IB (mA)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
10 3 1 0.3 Ta=75C 0.1 0.03 0.01 0.003 0.001 1 3 10 30 100 300 1000 25C -25C
VBE(sat) -- IC
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=10 100 30 10 3 25C 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 Ta=-25C 75C IC/IB=10 300
hFE -- IC
VCE=10V
Forward current transfer ratio hFE
250 Ta=75C 25C 150 -25C
200
100
50
0 1 3 10 30 100 300 1000
Collector current IC (mA)
Collector current IC (A)
Collector current IC (mA)
fT -- IE
200 180
Cob -- VCB
Collector output capacitance Cob (pF)
VCB=10V Ta=25C 50 45 40 103 IE=0 f=1MHz Ta=25C 104 VCB=20V
ICBO -- Ta
Transition frequency fT (MHz)
160 140 120 100 80 60 40 20 0 -1
30 25 20 15
ICBO (Ta) ICBO (Ta=25C)
35
102
10 10 5 0 1 1 3 10 30 100 0 60 120 180
-3
-10
-30
-100
Emitter current IE (mA)
Collector to base voltage VCB (V)
Ambient temperature Ta (C)
312
Transistor
ICEO -- Ta
105 VCE=10V
2SC1318A
104
ICEO (Ta) ICEO (Ta=25C)
103
102
10
1 0 20 40 60 80 100 120 140
Ambient temperature Ta (C)
313
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A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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